High temperature chemical vapor deposition lid

ABSTRACT

Process chamber lids, processing chambers and methods using the lids are described. The lid includes a pumping liner with a showerhead, blocker plate and gas funnel positioned therein. A liner heater is positioned on the pumping liner to control temperature in the pumping liner. Gas is flowed into the gas funnel using a dead-volume free one-way valve with a remote plasma source.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Divisional Application of U.S. application Ser.No. 17/350,073, filed on Jun. 17, 2021, which claims priority to U.S.Provisional Application No. 63/040,492, filed on Jun. 17, 2020, theentire disclosures of which are hereby incorporated by reference herein.

TECHNICAL FIELD

Embodiments of the disclosure generally relate to isolation valves. Inparticular, embodiment of disclosure relate to isolation valves forsemiconductor manufacturing with reduced dead volumes.

BACKGROUND

Gas flow paths including various valves are common in the semiconductormanufacturing industry. Current flow path configurations have deadvolumes that require a purge to prevent process gas back flow in theclean gas manifold. This is especially important where reactive gasesare employed to prevent gas phase reactions in the gas lines. Thereaction products can damage the equipment by chemical reaction orcausing clogging.

Additionally, the residue left from gas phase reactions in the processlines can have a substantial negative effect on subsequent processes.The residue may react with subsequent gases or process conditionscreating undesired products. The residue can also enter the processspace and form particulates on the substrate, damaging the device beingmanufactured. The manufacturing equipment needs to be subjected toextensive maintenance to remove and replace clogged lines and valvesleading to significant downtime and a loss of throughput.

There are a number chemical vapor deposition (CVD) processes thatrequire high temperatures for precursor flow and deposition. Current CVDprocess chamber lids are not compatible with high deposition processesbecause precursor can condense in the lower temperature portions of thelid.

Accordingly, there is a need for apparatus and methods for hightemperature chemical vapor deposition processes.

SUMMARY

One or more embodiments of the disclosure are directed to processchamber lids comprising a pumping liner, showerhead, blocker plate, gasfunnel and liner heater. The pumping liner comprises a body with aninner wall, an outer wall, a top wall and a bottom wall. The body has alower portion and an upper portion. The inner wall extends around acentral axis spaced a first distance from the central axis forming anopen central region.

The showerhead is positioned within the lower portion of the pumpingliner in the open central region. The showerhead has a front surface anda back surface defining a thickness with a plurality of aperturesextending through the thickness.

The blocker plate is positioned within the lower portion of the pumpingliner in the open central region. The blocker plate has a front surfaceand a back surface defining a thickness with a plurality of aperturesextending through the thickness. The front surface of the blocker plateis spaced a blocker distance from the back surface of the showerhead.

The gas funnel is positioned within the open central region of thepumping liner. The gas funnel has a front surface, a back surface, anouter wall and an inner wall. The front surface is spaced a funneldistance from the back surface of the blocker plate to form a funnelgap. The gas funnel has an opening extending through the back surface tothe front surface.

The liner heater is positioned on the top wall of the pumping liner.

Additional embodiments of the disclosure are directed to processingmethods comprising: flowing a first gas through a first inlet line intoa gas funnel; flowing a second gas through a second inlet line connectedto the first inlet line upstream of the gas funnel, the second gasflowing through a valve configured to allow a flow of gas downstreamonly; igniting a plasma of the second gas; exhausting gases through apump liner; and powering a liner heater to control a temperature in thepump liner.

Further embodiments of the disclosure are directed to non-transitorycomputer readable medium including instructions, that, when executed bya controller of a processing chamber, causes the processing chamber toperform operations of: flowing a gas through a first inlet line; flowinga gas through a second inlet line connected to the first inlet linethrough a valve configured to allow a flow of gas downstream only;igniting a plasma in the second inlet line; and powering a liner heaterto control a temperature in a pump liner.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentdisclosure can be understood in detail, a more particular description ofthe disclosure, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlytypical embodiments of this disclosure and are therefore not to beconsidered limiting of its scope, for the disclosure may admit to otherequally effective embodiments.

FIG. 1 shows an isometric view of a process chamber lid in accordancewith one or more embodiment of the disclosure;

FIG. 2 shows a top view of a process chamber lid in accordance with oneor more embodiment of the disclosure;

FIG. 3 shows a cross-sectional view of process chamber lid in accordancewith one or more embodiment of the disclosure;

FIG. 4 is an expanded view of region 4 of FIG. 3 ; and

FIG. 5 is a cross-sectional isometric view of a purge ring according toone or more embodiment of the disclosure.

DETAILED DESCRIPTION

Before describing several exemplary embodiments of the disclosure, it isto be understood that the disclosure is not limited to the details ofconstruction or process steps set forth in the following description.The disclosure is capable of other embodiments and of being practiced orbeing carried out in various ways.

As used in this specification and the appended claims, the term“substrate” refers to a surface, or portion of a surface, upon which aprocess acts. It will also be understood by those skilled in the artthat reference to a substrate can also refer to only a portion of thesubstrate, unless the context clearly indicates otherwise. Additionally,reference to depositing on a substrate can mean both a bare substrateand a substrate with one or more films or features deposited or formedthereon

A “substrate” as used herein, refers to any substrate or materialsurface formed on a substrate upon which film processing is performedduring a fabrication process. For example, a substrate surface on whichprocessing can be performed include materials such as silicon, siliconoxide, strained silicon, silicon on insulator (SOI), carbon dopedsilicon oxides, amorphous silicon, doped silicon, germanium, galliumarsenide, glass, sapphire, and any other materials such as metals, metalnitrides, metal alloys, and other conductive materials, depending on theapplication. Substrates include, without limitation, semiconductorwafers. Substrates may be exposed to a pretreatment process to polish,etch, reduce, oxidize, hydroxylate, anneal, UV cure, e-beam cure and/orbake the substrate surface. In addition to film processing directly onthe surface of the substrate itself, in the present disclosure, any ofthe film processing steps disclosed may also be performed on anunderlayer formed on the substrate as disclosed in more detail below,and the term “substrate surface” is intended to include such underlayeras the context indicates. Thus for example, where a film/layer orpartial film/layer has been deposited onto a substrate surface, theexposed surface of the newly deposited film/layer becomes the substratesurface.

As used in this specification and the appended claims, the terms“precursor”, “reactant”, “reactive gas” and the like are usedinterchangeably to refer to any gaseous species that can react with thesubstrate surface, or with a film formed on the substrate surface.

Some embodiments of the disclosure are directed to methods of depositingmetal films by atomic layer deposition (ALD). Some embodiments aredirected to ALD tungsten films. Some embodiments incorporate a chemicalvapor deposition (CVD) silicon using an integrated environment.

One or more embodiments of the disclosure are directed to depositionchamber lids designed for temperature controller CVD precursordispensing to the chamber. Some embodiments advantageously provide adeposition chambers with ring heaters and pumping liner heaters forincreased temperature control. Some embodiments incorporate dual lidseals to enable high temperature dispensing up to 250° C. Someembodiments advantageously spacer ring added to the deposition lid forvariable process spacing. Some embodiments incorporate thick showerheadsand blocker plates designed to avoid warpage during high temperatureprocesses as well as to ensure uniform temperature distribution.

One or more embodiments of the disclosure are directed to depositionchambers incorporating pumping liners where the lid station is mounted.The pumping liner of some embodiments has two outlets to be connectedwith foreline (exhaust). In some embodiments, the shower head, blockerplate and lid station are stacked together. In one or more embodiments,screw ports are sealed with O-rings to isolate the vacuum environment.

In some embodiments, a plurality of heater plates is mounted on thepumping liner. In some embodiments, each heater is rated for 300 W. Insome embodiments, each heater is independently controllable. In one ormore embodiments, a ring heater is also mounted on the lid station. Insome embodiments, the lid station ring heater has a maximum power ratingof 1500 W.

In some embodiments, top and bottom manifolds are mounted on the lidstation with dual seals. In some embodiments, manifolds have threedelivery ports: top port for main precursor delivery, a side port forpurge gas and a bottom port is for plasma cleaning radicals. In someembodiments, a spacer ring is sandwiched between the lid station andpumping liner with dual seals. In some embodiments, a differentialpumping line is connected to the lid to pump down air trapped betweenthe two seals.

Accordingly, one or more embodiments of the disclosure are directed toprocess chamber lid 100 configured for high temperature gas delivery.FIG. 1 illustrates an isometric view of a process chamber lid 100according to one or more embodiment of the disclosure. FIG. 2illustrates a top view of the process chamber lid 100 of FIG. 1 . FIG. 3illustrates a cross-sectional view of the process chamber lid 100 shownin FIGS. 1 and 2 taken along line 3-3′. The various shading shown in theFigures is for descriptive purposes only to aid in identification ofparts and does not imply any particular material of construction. Theprocess chamber lid 100 includes a pumping liner 200, a gas funnel 300,a blocker plate 350, a showerhead 280 and a liner heater 270 asdescribed herein.

The pumping liners 200 have a body 202 with any suitable shape. In someembodiments, as shown in the Figures, the body 202 has a generallycylindrical body. However, the skilled artisan will recognize that thepumping liner 200 can have any suitable shape depending on, for example,the process chamber lid in which the liner will be used.

The body 202 of the pumping liner 200 has an inner wall 204, an outerwall 206, a top wall 208 and a bottom wall 210. The inner wall 204 hasan inner face that extends around the central axis 201 of the body 202and is spaced a distance from the central axis 201.

In some embodiments, as illustrated in the Figures, the outer wall 206of the upper portion 214 is further from the central axis 201 than theouter wall 206 of the lower portion 212.

In some embodiments the upper portion 214 of the body 202 comprises atleast one exhaust port 240. The exhaust port 240 provides fluidcommunication with the upper portion 214, or the plenum 215 through thetop wall 208. In the embodiment illustrated in the Figures, the body 202comprises two exhaust ports 240. The skilled artisan will recognize thatthere can be any suitable number of exhaust ports 240.

In some embodiments, the pumping liner 200 comprises two exhaust ports240 positioned about 180° apart relative to the central axis 201. Beingspaced apart relative to the central axis means that the statedcomponents are at different rotational positions based on the centralaxis, the distance from the central axis can be the same or different.In some embodiments, there are three exhaust ports 240 positioned about120° apart relative to the central axis 201. In some embodiments, thereare four exhaust ports 240 positioned about 90° apart relative to thecentral axis 201.

In some embodiments, as shown in the Figures, the outer wall 206 of theupper portion 214 adjacent an exhaust port 240 is further from thecentral axis 201 than the outer wall 206 of the upper portion 214 about90° relative to the central axis 201 from the exhaust port 240. Stateddifferently, in some embodiments, the width (measured from the centralaxis) of the plenum 215 is greater at the exhaust ports 240 than atabout 90° from the exhaust ports 240. In some embodiments, the width ofthe plenum 215 varies gradually from a local maximum at the exhaust port240 to a local minimum at the maximum distance from an exhaust port 240.For example, in a symmetrical system in which the exhaust ports areexactly 180° apart, the width of the plenum 215 at 90° from the exhaustport 240 is a local minimum.

In some embodiments, the bottom wall 210 comprises a plurality ofapertures 250 extending through the bottom wall 210. The apertures 250extend from a plenum opening in the bottom surface of the plenum 215 toa bottom opening in the bottom surface or bottom inner surface of thebottom wall 210. In some embodiments, the apertures are angled from anupper end to a lower end of the aperture so that the plenum opening isfurther from the central axis 201 than the bottom opening.

A showerhead 280 is positioned in the open central region 260 of thepumping liner 200. The showerhead 280 of some embodiments is positionedwithin the lower portion 212 of the open central region 260 of thepumping liner 200. The showerhead 280 has a front surface 282 and a backsurface 284 defining a thickness of the showerhead 280, and an outerperipheral edge 286. A plurality of apertures 288 extend through thethickness of the showerhead 280 and have openings in the front surface282 and the back surface 284. In some embodiments, the outer peripheraledge 286 of the showerhead 280 has an angled surface aligned with theopening 250 in the bottom wall 210 of the pumping liner 200. Theshowerhead 280 can be any suitable showerhead known to the skilledartisan with any suitable number of apertures 288 arranged in anysuitable configuration.

A blocker plate 350 is positioned in the open central region 260 of thepumping liner 200. The blocker plate 350 of some embodiments ispositioned within the lower portion 212 of the open central region 260of the pumping liner 200. The blocker plate 350 has a front surface 352and a back surface 354 that define a thickness of the of the blockerplate 350. A plurality of apertures 356 extend through the thickness ofthe blocker plate 350. The front surface 352 of the blocker plate 350 isspaced a blocker distance D_(B) from the back surface 284 of theshowerhead 280.

The gas funnel 300 is positioned within the open central region 260 ofthe pumping liner 200. The gas funnel 300 has a front surface 304,sidewalls 306 and a back surface 307. The sidewalls 306 comprise anouter wall 312 and an inner wall 310.

The front surface 304 of some embodiments is spaced a distance DF fromthe back surface 354 of the blocker plate 350 to form a funnel gap 308.In some embodiments, the funnel gap 308 has a uniform dimension fromedge to edge of the gas funnel 300. In some embodiments, the frontsurface 304 of the gas funnel 300 has an inverted funnel-like shape witha larger gap adjacent the central axis 201 of the funnel 300 thanadjacent the front edge near the outer peripheral region.

The sidewalls 306 have an outer face 310 and an inner face 312. Theouter face 310 of the sidewalls 306 contact the inner wall 304 of thepumping liner 200. The outer face 310 of the sidewalls 306 is in contactwith the inner face 221 of the first baffle 220 and the inner face 231of the second baffle 230 to form the outer boundary of the first plenum223 and second plenum 225.

The gas funnel 300 has an opening 314 extending through the back surface307 to the front surface 304. The opening 314 of some embodiments issymmetrical around a central axis of the gas funnel 300. In someembodiments, the opening 314 is adjacent the front surface 304 flaresfrom a first diameter at the back surface 307 to a second diameterlarger than the first diameter at the front surface 304. The diameter ofthe opening 314 of some embodiments remains substantially uniform(within ±0.1 mm) from the back surface 307 to a depth within the gasfunnel 300 and then flares from the depth within the gas funnel 300 tothe second diameter at the front surface 304, as illustrated in FIG. 3 .

In some embodiments, the gas funnel 300 includes a plurality ofapertures 320 extending from the front surface 304 to the back surface307. The apertures 320 are spaced adjacent to the outer peripheral edge316 of the front surface 304 of the gas funnel 300. In some embodiments,the apertures are angled inwardly so that the opening of the aperture320 in the front surface 304 is further from the central axis 301 thanthe opening of the aperture 320 in the back surface 307. The number,size and spacing of apertures 320 in the gas funnel 300 can be varied.In some embodiments, there are greater than or equal to about 48apertures 320 equally spaced around the outer peripheral region of thefunnel 300.

In some embodiments, the process chamber lid 100 includes a liner heater150. The liner heater 150 is positioned on the top wall 208 of thepumping liner 200. In some embodiments, the liner heater 150 comprises aplurality of separate segments spaced around the top wall 208 of thepumping liner 200. The embodiment illustrated in the Figures has fourliner heater 150 segments. In some embodiments, there are two, three,four, five, six, seven or eight separate liner heater 150 segments.

In some embodiments, all of the liner heater 150 segments are controlledat the same time. In some embodiments, each of the segments isindependently controlled.

In some embodiments, the liner heater 150 segments are separated byanother component of the process chamber lid 100. In some embodiments,the liner heater 150 segments are separated from adjacent segments by aneye bolt 160 connected to the pumping liner 200. In some embodiments,there is the same number of eye bolts 160 as liner heater 150 segments.

FIG. 4 shows an expanded view of region 4 illustrated in FIG. 3 . Withreference to FIGS. 3 and 4 , in some embodiments, the pumping liner 200comprises an outer top wall 208 a and an inner top wall 208 b that forman inner ledge 209. The inner ledge 209 has a ledge surface 209 aconnecting the inner top wall 208 b and the outer top wall 208 a.

In some embodiments, as shown in the Figures, the outer wall 312 of thegas funnel 300 comprises a lower outer wall 312 b and an upper outerwall 312 a. The upper outer wall 312 a extends further from the centralaxis 201 than the lower outer wall 312 b. The lower outer wall 312 b andthe upper outer wall 312 a are connected by a cantilever surface 315. Insome embodiments, the cantilever surface 315 of the gas funnel 300 ispositioned over the ledge 209 a of the pumping liner 200. In someembodiments, the cantilever surface 315 of the gas funnel 300 isdirectly over the ledge 209 a of the pumping liner 200. As used in thismanner, the term “directly over” means that there are no interveningcomponents other than O-rings separating the recited parts.

In some embodiments, the cantilever surface 315 is over the ledge 209 aand spaced from the ledge 209 by a spacer ring 170. The spacer ring 170has a top surface 171 and a bottom surface 172 defining a thickness ofthe spacer ring 170. The spacer ring 170 of some embodiments ispositioned between the cantilever surface 315 of the gas funnel 300 andthe ledge 209 of the pumping liner 200 so that the cantilever surface315 is adjacent the top surface 171 of the spacer ring 172 and the ledge209 a is adjacent the bottom surface 172 of the spacer ring 170. In someembodiments, the spacer ring 170 is positioned directly between thecantilever surface 315 of the gas funnel 300 and the ledge 209 of thepumping liner 200 so that the cantilever surface 315 is adjacent the topsurface 171 of the spacer ring 172 and the ledge 209 a is adjacent thebottom surface 172 of the spacer ring 170. As used in this manner theterm “directly between” means that there no intervening components otherthan O-rings between the recited components.

In some embodiments, an inner top surface O-ring 174 and an outer topsurface O-ring 175 are positioned between and in direct contact with thetop surface 171 of the spacer ring 170 and the cantilever surface 315 ofthe gas funnel 300. In some embodiments, an inner bottom surface O-ring176 and an outer bottom surface O-ring 177 are positioned between and indirect contact with the bottom surface 172 of the spacer ring 170 andthe ledge 209 a of the pumping liner 200.

Referring to FIG. 5 , some embodiments of the process chamber lid 100include a purge ring 400. The purge ring 400 of some embodiments ispositioned within the open central region 260 of the pumping liner 100.The bottom surface 406 of the purge ring 400 of some embodiments is incontact with the back surface 307 of the gas funnel 300. As used in thismanner, the term “in contact with” means that the components arephysically touching, or are close enough to form a fluid tight seal, forexample, using one or more O-rings.

Referring to FIG. 5 , some embodiments of the process chamber lid 100include a purge ring 400. The purge ring 400 has a ring shaped body 402extending around a central axis 401. The body 402 has an innerperipheral edge 403, an outer peripheral edge 404, a top surface 405 anda bottom surface 406. Inner peripheral edge 403 and outer peripheraledge 404 define a width W of the body 402 and the top surface 405 andbottom surface 406 define a thickness T of the body 402.

A circular channel 410 is formed in the bottom surface 406 of the body402. The channel 410 has an inner peripheral edge 412, an outerperipheral edge 414 and a top surface 416. The channel 410 illustratedhas a generally rectangular shaped cross-section. The disclosure is notlimited to rectangular shaped cross-sectional channels 410. In someembodiments, the channel 410 is ovoid shaped or shaped without a hardcorner. At least one opening 430 forms a fluid connection between thechannel 410 and the top surface 416 to allow a flow of gas (or vacuum)to pass between the channel 410 and a component adjacent the top surface416.

In some embodiments, a thermal element 420 is within the body 402. Insome embodiments, as illustrated, the thermal element 420 is formed inthe top surface 405 of the body 402. In some embodiments, the thermalelement 420 is formed within the thickness of the body 402 so that thethermal element is not exposed through the top surface 405 or the bottomsurface 406. In some embodiments the thermal element 420 is positionedcloser to the central axis 401 of the body 402 than the circular channel410, as illustrated in FIG. 5 . In some embodiments, connections 425 a,425 b are connected to the thermal element 420. The connections 425 a,425 b can be any suitable connection depending on the type of thermalelement 420. For example, for a resistive heater, the connections 425 a,425 b of some embodiments are electrodes.

In some embodiments, the thermal element 420 is a part of the purge ring400. In some embodiments, the thermal element 420 is a separatecomponent from the purge ring 400.

Referring to FIGS. 1 and 2 , some embodiments of the disclosure furthercomprise a thermal element 440 positioned adjacent the back surface 307of the gas funnel 300. In some embodiments, the thermal element 440 ispositioned adjacent to or embedded within the back surface of the gasfunnel 300 adjacent the outer peripheral edge of the back surface of thegas funnel 300. In some embodiments, the thermal element 440 is acooling element. The thermal element 440 of some embodiments includes afirst connection 441 and a second connection 442. The first connection441 and second connection 442 can be any suitable connection typedepending on the type of cooling element. For example, the firstconnection 441 and second connection 442 in some embodiments areelectrical connections, or are hollow tubes to allow a fluid to flowthrough the thermal element 440.

In some embodiments, the spacing between the gas funnel 300 and theblocker plate 350, and between the blocker plate 350 and the showerhead280 are controlled to change the mixing dynamics of gas(es) flowingthrough the process chamber lid 100. In some embodiments, the funnel gap308 forms a plenum to distribute gases flowing through the inlet 313 ofthe gas funnel 300, out the opening 314 in the front surface 304 of thegas funnel 300 and into the plenum formed by the funnel gap 308. Insidethe funnel gap 308, the gases flow laterally across the back surface 354of the blocker plate 350 to fill the funnel gap 308.

In one or more embodiments, the apertures 356 through the blocker plate350 vary in size from the center of the blocker plate 350 to the outerperipheral edge of the blocker plate 350. In some embodiments, thediameters of the apertures 356 increase from the center to the outeredge of the blocker plate. The varied diameters promote the lateral flowdiffusion of the gases to fill the funnel gap 308.

In some embodiments, the blocker distance D_(B) is sufficiently small tosubstantially prevent lateral diffusion of the gases between the blockerplate 350 and the showerhead 280. In some embodiments, the apertures 288in the showerhead 280 are substantially uniform in size across thesurface of the showerhead.

Referring to FIG. 3 , some embodiments further comprise a gas inlet 470connected to, or directly connected to, the back surface 307 of the gasfunnel 300. As used in this manner, the gas inlet 470 comprises one ormore components configured to provide a flow of gas to the gas funnel300. The gas inlet 470 provides fluid communication between the gasinlet 470 and the inlet 313 through and the opening 314 in the frontsurface 304 of the gas funnel 300.

The gas inlet 470 of some embodiments is connected to gas inlet 500which includes a valve 510 in accordance with one or more embodiment ofthe disclosure. The valve 510 is also referred to as a dead volume-freevalve. The valve 510 has a first inlet line 520 that passes through thebody of the valve. The first inlet line has an upstream end 522 and adownstream end 524 that define the length of the first leg 520.

The gas inlet 500 includes a second inlet line 530. The second inletline 530 has an upstream end 532 and a downstream end 534 defining alength of the second inlet line 530. The shape of the inlet lines can bevaried and the length is measured from the center of the flow path ofthe lines.

The first inlet line 520 and the second inlet line 530 join at junction525. The downstream end 534 of the second inlet line 530 connects withthe first inlet line 520 at the junction 525. The junction of someembodiments is located along the length of the first inlet line 520.Stated differently, the junction 525 is located a distance from theupstream end 522 of the first inlet line 520 and a distance from thedownstream end 524 of the first inlet line 520. The distances from theends can be the same or different. In some embodiments, the junction isin the range of 25% to 75% of the length of the first inlet line 520.

The valve 510 includes a sealing surface 540 positioned along the lengthof the second inlet line 530. The sealing surface 540 is configured toseparate the first inlet line 520 and the second inlet line 530 toprevent fluid communication between the first inlet line 520 and thesecond inlet line 530 upstream of the sealing surface 540. Stateddifferently, in some embodiments, the second inlet line 530 has a valve510 configured to allow a flow of gas downstream only. The sealingsurface 540 can be made of any suitable material that is compatible withthe chemistries to be flowed through the first inlet line 520 and thesecond inlet line 530. In some embodiments, the sealing surface 540comprises a check valve. The valve 510 of the illustrated embodimentcomprises a ball valve in which the sealing surface 540 covers the inletend of the valve when no or insufficient flow occurs through the secondinlet line 530. The sealing surface 540 ball moves upon sufficient flowto allow fluid communication to occur from the upstream end to thedownstream end of the valve.

In some embodiments, there is no dead volume in the valve 510. Deadvolume is space which a gas can form eddies and become stuck so thatafter flow is stopped some of that gaseous species remains and can beadded to the next gas flow.

While two inlet lines are illustrated in FIG. 3 , the skilled artisanwill recognize that more than two inlet lines are within the scope ofthe disclosure. For example, the valve can have a third inlet line (notshown) connecting to the first inlet line 520 or the second inlet line530 at a second junction (not shown). In some embodiments, the thirdinlet line connects to the first inlet line 520 at the same junction 525as the second inlet line 530.

FIG. 5 illustrates an embodiment which includes an optional remoteplasma source 550. In some embodiments, the remote plasma source 550 isconnected to the second inlet line 530 or the valve 510 to flow a plasmainto the first inlet line 520 at junction 525. In some embodiments, theremote plasma source (RPS) 550 is between the downstream end 524 of thefirst inlet line 520 and the gas funnel 300. The remote plasma source550 can be any suitable plasma source known to the skilled artisan.Suitable sources include, but are not limited to, capacitively coupledplasma (CCP) sources, inductively coupled plasma (ICP) sources,microwave plasma sources.

In some embodiments, even though the valve 510 is along the length ofthe second inlet line 530, the valve 510 is isolated from the secondinlet line 530 by an isolation block 560. The isolation block 560 can beany suitable material that can separate the valve 510 from the secondinlet line 530 to allow a plasma to be ignited within the valve 510 andnot travel upstream along the second inlet line 530.

Referring back to FIG. 2 , some embodiments include a controller 590coupled to various components of the process chamber lid 100 to controlthe operation thereof. The controller 590 of some embodiments controlsthe entire processing chamber (not shown). In some embodiments, theprocessing platform includes multiple controllers, of which controller590 is a part; each controller configured to control one or moreindividual portions of the processing platform. For example, theprocessing platform of some embodiments comprises separate controllersfor one or more of the individual processing chambers, central transferstation, factory interface and/or robots.

In some embodiments, at least one controller 590 is coupled to one ormore of the process chamber lid 100, liner heater 150, one or more flowcontroller, pressure gauge, pump, feedback circuit, plasma source 550,purge ring 400, thermal element 440, or other component used for theoperation of the processing chamber or process chamber lid 100, as theskilled artisan will understand.

The controller 590 may be one of any form of general-purpose computerprocessor, microcontroller, microprocessor, etc., that can be used in anindustrial setting for controlling various chambers and sub-processors.The at least one controller 590 of some embodiments has a processor 592,a memory 594 coupled to the processor 592, input/output devices 596coupled to the processor 592, and support circuits 598 to communicationbetween the different electronic components. The memory 594 of someembodiments includes one or more of transitory memory (e.g., randomaccess memory) and non-transitory memory (e.g., storage).

The memory 594, or a computer-readable medium, of the processor may beone or more of readily available memory such as random access memory(RAM), read-only memory (ROM), floppy disk, hard disk, or any other formof digital storage, local or remote. The memory 594 can retain aninstruction set that is operable by the processor 592 to controlparameters and components of the system. The support circuits 598 arecoupled to the processor 592 for supporting the processor in aconventional manner. Circuits may include, for example, cache, powersupplies, clock circuits, input/output circuitry, subsystems, and thelike.

Processes may generally be stored in the memory as a software routinethat, when executed by the processor, causes the process chamber toperform processes of the present disclosure. The software routine mayalso be stored and/or executed by a second processor (not shown) that isremotely located from the hardware being controlled by the processor.Some or all of the method of the present disclosure may also beperformed in hardware. As such, the process may be implemented insoftware and executed using a computer system, in hardware as, e.g., anapplication specific integrated circuit or other type of hardwareimplementation, or as a combination of software and hardware. Thesoftware routine, when executed by the processor, transforms the generalpurpose computer into a specific purpose computer (controller) thatcontrols the chamber operation such that the processes are performed.

Some embodiments of the disclosure are directed to process chamber lids100 and methods of processing using the process chamber lid 100 asdescribed herein. Some embodiments of the disclosure are directed tocontrollers 590 having one or more configurations to execute individualprocesses or sub-processes to perform embodiments of the methoddescribed herein. The controller 590 can be connected to and configuredto operate intermediate components to perform the functions of themethods. For example, the controller 590 of some embodiments isconnected to (directly or indirectly) and configured to control one ormore of gas valves, actuators, motors, access ports, vacuum control,etc. Some embodiments are directed to non-transitory computer readablemedium configured to execute embodiments of the method.

In some embodiments, the controller 90, or non-transitory computerreadable medium, has one or more configurations or instructions selectedfrom: a configuration to flow a gas through a first inlet line; aconfiguration to flow a gas through a second inlet line connected to thefirst inlet line through a valve configured to allow a flow of gasdownstream only; a configuration to ignite a plasma in the second inletline; and a configuration to power a liner heater to control atemperature in a pump liner.

Reference throughout this specification to “one embodiment,” “certainembodiments,” “one or more embodiments” or “an embodiment” means that aparticular feature, structure, material, or characteristic described inconnection with the embodiment is included in at least one embodiment ofthe disclosure. Thus, the appearances of the phrases such as “in one ormore embodiments,” “in certain embodiments,” “in one embodiment” or “inan embodiment” in various places throughout this specification are notnecessarily referring to the same embodiment of the disclosure.Furthermore, the particular features, structures, materials, orcharacteristics may be combined in any suitable manner in one or moreembodiments.

Although the disclosure herein has been described with reference toparticular embodiments, those skilled in the art will understand thatthe embodiments described are merely illustrative of the principles andapplications of the present disclosure. It will be apparent to thoseskilled in the art that various modifications and variations can be madeto the method and apparatus of the present disclosure without departingfrom the spirit and scope of the disclosure. Thus, the presentdisclosure can include modifications and variations that are within thescope of the appended claims and their equivalents.

What is claimed is:
 1. A processing method comprising: flowing a firstgas through a first inlet line into a gas funnel; flowing a second gasthrough a second inlet line connected to the first inlet line upstreamof the gas funnel, the second gas flowing through a valve configured toallow a flow of gas downstream only; igniting a plasma of the secondgas; exhausting gases through a pump liner; wherein the pump linercomprises a body having an inner wall, an outer wall, a top wall and abottom wall, the body having a lower portion and an upper portion, theinner wall extending around a central axis spaced a first distance fromthe central axis forming an open central region; and powering a linerheater to control a temperature in the pump liner, wherein the linerheater comprises a plurality of separate segments spaced around the topwall of the pump liner wherein each of the segments is independentlycontrolled.
 2. The processing method of claim 1, wherein the top wall ofthe pump liner comprises an outer top wall and an inner top wall, theinner top wall forming an inner ledge having a ledge surface connectingthe inner top wall and the outer top wall.
 3. The processing method ofclaim 1, wherein the gas funnel has a front surface, a back surface, anouter wall and an inner wall, the front surface spaced a funnel distancefrom the back surface of a blocker plate to form a funnel gap, the gasfunnel having an opening extending through the back surface to the frontsurface.
 4. The processing method of claim 3, wherein the outer wall ofthe gas funnel comprises a lower outer wall and an upper outer wallconnected by a cantilever surface.
 5. The processing method of claim 4,further comprising positioning the cantilever surface of the gas funnelover the inner ledge of the pump liner.
 6. The processing method ofclaim 5, further comprising positioning a spacer ring between thecantilever surface of the gas funnel and the inner ledge of the pumpingliner so that the cantilever surface of the gas funnel is adjacent a topsurface of the spacer ring and the inner ledge of the pumping liner isadjacent a bottom surface of the spacer ring.
 7. The processing methodof claim 6, further comprising positioning an inner top surface O-ringand an outer top surface O-ring between and in contact with the topsurface of the spacer ring and the cantilever surface of the gas funnel.8. The processing method of claim 6, further comprising positioning aninner bottom surface O-ring and an outer bottom surface O-ring betweenand in contact with the bottom surface of the spacer ring and the innerledge of the pumping liner.
 9. The processing method of claim 3, furthercomprising positioning a purge ring within the open central region ofthe pump liner such that a bottom surface of the purge ring is incontact with the back surface of the gas funnel.
 10. The processingmethod of claim 9, wherein the purge ring comprises: a ring-shaped bodywith a central axis, an inner peripheral edge and an outer peripheraledge defining a width of the purge ring, and a top surface and thebottom surface defining a thickness of the ring-shaped body; a circularchannel formed in the bottom surface of the ring-shaped body, thecircular channel having an inner peripheral edge, an outer peripheraledge and a top surface; and at least one opening extending from the topsurface of the body to the top surface of the circular channel, whereinthe circular channel is aligned with a plurality of apertures formed inthe gas funnel, the plurality of apertures extending through the gasfunnel to the front surface of the gas funnel near an outer peripheraledge of the gas funnel.
 11. The processing method of claim 10, whereinring-shaped body of the purge ring further comprises a thermal elementpositioned closer to the central axis of the ring-shaped body than thecircular channel.
 12. The processing method of claim 10, furthercomprising positioning a thermal element adjacent the back surface ofthe gas funnel adjacent the outer peripheral edge of the back surface ofthe gas funnel.
 13. The processing method of claim 10, wherein aplurality of apertures in the blocker plate gradually increase indiameter from a center of the blocker plate to an outer edge of theblocker plate.
 14. The processing method of claim 3, further comprisingconnecting a gas inlet to the back surface of the gas funnel andproviding fluid communication between the gas inlet and the first inletline through the opening in the back surface of the gas funnel.
 15. Theprocessing method of claim 1, wherein the method comprises separatingeach of the segments is from adjacent segments by an eye bolt connectedto the pump liner.